MOSFET 2N-CH 20V 7.5A 8SOIC FDS6892AZ
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Description:
MOSFET 2N-CH 20V 7.5A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
FDS6892AZ(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21960,Price reference "real-time change" China/Hongkong。 FDS6892AZ package/specs, Download FDS6892AZ、Datasheet。